FST6340M datasheet(1/3 Pages) GENESIC

部件名	FST6340M

功能描述	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

标志

1 / 3 page

VRRM = 40 V - 100 V

IF(AV) = 60 A

Features

• High Surge Capability

D61-3M Package

• Not ESD Sensitive

Parameter

Symbol

FST6340M FST6345M FST6360M FST6380M

Unit

Repetitive peak reverse

voltage

VRRM

40

45

60

80

V

RMS reverse voltage

VRMS

28

32

42

56

V

Silicon Power

Schottky Diode

Conditions

100

70

FST6340M thru FST63100M

FST63100M

Maximum ratings, at Tj = 25 °C, unless otherwise specified

• Types from 40 V to 100 V VRRM

DC blocking voltage

VDC

40

45

60

80

V

Operating temperature

Tj

-55 to 150 -55 to 150 -55 to 150 -55 to 150

°C

Storage temperature

Tstg

-55 to 150 -55 to 150 -55 to 150 -55 to 150

°C

Parameter

Symbol

FST6340M FST6345M FST6360M FST6380M

Unit

Average forward current (per

pkg)

IF(AV)

60

A

Maximum instantaneous

forward voltage (per leg)

0.70

7.0

0.75

0.84

1111

10

30

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

1.20

°C/W

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

Tj = 150 °C

IR

30

mA

A

-55 to 150

100

1.20

0.84

10

V

Tj = 25 °C

IFM = 30 A, Tj = 25 °C

Conditions

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

VF

-55 to 150

FST63100M

1

Tj = 100 °C

TC = 125 °C

60

Peak forward surge current

(per leg)

IFSM

tp = 8.3 ms, half sine

600

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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