FST73100M datasheet(1/3 Pages) GENESIC

部件名	FST73100M

功能描述	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

标志

1 / 3 page

VRRM = 45 V - 100 V

IF(AV) = 70 A

Features

• High Surge Capability

D61-3M Package

• Not ESD Sensitive

Parameter

Symbol

FST7345M FST7360M

Unit

Repetitive peak reverse voltage

VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

DC blocking voltage

VDC

45

60

V

• Types from 45 V to 100V VRRM

Conditions

100

70

100

80

FST7345M thru FST73100M

FST73100M

80

56

FST7380M

Maximum ratings, at Tj = 25 °C, unless otherwise specified

Silicon Power

Schottky Diode

DC blocking voltage

VDC

45

60

V

Operating temperature

Tj

-55 to 150 -55 to 150

°C

Storage temperature

Tstg

-55 to 150 -55 to 150

°C

Parameter

Symbol

FST7345M FST7360M

Unit

Average forward current (per

pkg)

IF(AV)

70

A

Maximum instantaneous

forward voltage (per leg)

0.70

0.75

11

10

30

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

1.10

°C/W

A

TC = 125 °C

70

Peak forward surge current (per

leg)

IFSM

tp = 8.3 ms, half sine

600

-55 to 150

100

80

0.84

10

V

Tj = 25 °C

IFM = 35 A, Tj = 25 °C

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

VF

-55 to 150

FST73100M

FST7380M

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

IR

30

Tj = 150 °C

mA

10

11

1.10

Tj = 100 °C

1.10

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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