FST83100M datasheet(1/3 Pages) GENESIC

部件名	FST83100M

功能描述	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

标志

1 / 3 page

VRRM = 45 V - 100 V

IF(AV) = 80 A

Features

• High Surge Capability

D61-3M Package

• Not ESD Sensitive

Parameter

Symbol

FST8345M

FST8360M

Unit

Repetitive peak reverse voltage

VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

DC blocking voltage

VDC

45

60

V

• Types from 45 V to 100V VRRM

Conditions

100

70

100

80

FST8345M thru FST83100M

FST83100M

80

56

FST8380M

Maximum ratings, at Tj = 25 °C, unless otherwise specified

Silicon Power

Schottky Diode

DC blocking voltage

VDC

45

60

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

FST8345M

FST8360M

Unit

Average forward current (per

pkg)

IF(AV)

80

A

Maximum instantaneous

forward voltage (per leg)

0.72

0.78

11

10

30

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

1.10

°C/W

A

TC = 125 °C

80

Peak forward surge current (per

leg)

IFSM

tp = 8.3 ms, half sine

600

-55 to 150

100

80

0.84

10

V

Tj = 25 °C

IFM = 40 A, Tj = 25 °C

Conditions

-55 to 150

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

VF

-55 to 150

FST83100M

FST8380M

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

IR

Tj = 150 °C

30

mA

10

11

1.10

Tj = 100 °C

1.10

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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FST83100M 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

FST83100M 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - FST83100M

类似说明 - FST83100M

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FST83100M 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

FST83100M 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - FST83100M

类似说明 - FST83100M

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1 2 3

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链接网址

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