FST100100 datasheet(1/3 Pages) GENESIC

部件名	FST100100

功能描述	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

标志

1 / 3 page

VRRM = 45 V - 100 V

IF(AV) = 100 A

Features

• High Surge Capability

TO-249AB Package

• Isolated to Plate

• Not ESD Sensitive

Parameter

Symbol

FST10045

FST10060

Unit

Repetitive peak reverse voltage

VRRM

45

60

V

RMS reverse voltage

VRMS

32

42

V

DC blocking voltage

VDC

45

60

V

Silicon Power

Schottky Diode

• Types from 45 V to 100V VRRM

FST10045 thru FST100100

FST100100

80

57

FST10080

Maximum ratings, at Tj = 25 °C, unless otherwise specified

100

70

100

80

Conditions

DC blocking voltage

VDC

45

60

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

FST10045

FST10060

Unit

Average forward current (per

pkg)

IF(AV)

100

A

Maximum instantaneous

forward voltage (per leg)

0.70

0.75

11

10

30

Thermal characteristics

Thermal resistance, junction -

case (per leg)

R

ΘJC

1.0

°C/W

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

TC = 125 °C

100

Peak forward surge current (per

leg)

IFSM

tp = 8.3 ms, half sine

1000

A

Maximum Instantaneous

reverse current at rated DC

blocking voltage (per leg)

IR

VF

Tj = 100 °C

30

Tj = 25 °C

IFM = 50 A, Tj = 25 °C

10

Conditions

-55 to 150

FST100100

11

FST10080

1.0

Tj = 150 °C

1.0

0.84

30

mA

V

-55 to 150

100

80

-55 to 150

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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FST100100 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

FST100100 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - FST100100

类似说明 - FST100100

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FST100100 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

FST100100 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - FST100100

类似说明 - FST100100

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数据表 下载

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数据表下载