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FST16035L 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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FST16035L 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page ![]() VRRM = 35 V IF(AV) = 160 A Features • High Surge Capability TO-249AB Package • Isolated to Plate • Not ESD Sensitive Parameter FST16035L Unit 35 V 25 V 35 V Low VF Silicon Power Schottky Diode FST16035L Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Maximum recurrent peak reverse voltage Maximum RMS voltage M i DC bl ki lt Conditions Symbol VRRM VRMS V 35 V -55 to 150 °C -55 to 150 °C Parameter FST16035L Unit 160 A 1000 A 0.60 1 150 Thermal characteristics Maximum thermal resistance, junction - case (per leg) 0.50 °C/W Operating temperature mA V R ΘJC Electrical characteristics, at Tj = 25 °C, unless otherwise specified Conditions Tstg Symbol Maximum DC blocking voltage Storage temperature TC = 100 °C VDC Tj Average forward current (per pkg) IF(AV) Maximum instantaneous forward voltage (per leg) Maximum instantaneous reverse current at rated DC blocking voltage (per leg) IR Tj = 100 °C tp = 8.3 ms, half sine IFSM Peak forward surge current (per leg) IFM = 80 A, Tj = 25 °C Tj = 25 °C VF www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 |
类似零件编号 - FST16035L |
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类似说明 - FST16035L |
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