FST8360M datasheet(1/3 Pages) GENESIC

部件名	FST8360M

功能描述	Silicon Power Schottky Diode

PDF	3 Pages

Scroll/Zoom	100%

制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

标志

1 / 3 page

VRRM = 45 V

IF(AV) = 160 A

Features

• High Surge Capability

TO-249AB Package

• Isolated to Plate

• Not ESD Sensitive

Parameter

FST16045L

Unit

45

V

32

V

45

V

Low VF Silicon Power

Schottky Diode

FST16045L

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Maximum recurrent peak reverse voltage

Maximum RMS voltage

M i

DC bl ki

lt

Conditions

Symbol

VRRM

VRMS

V

45

V

-55 to 150

°C

-55 to 150

°C

Parameter

FST16045L

Unit

160

A

1000

A

0.60

3

250

Thermal characteristics

Maximum thermal resistance,

junction - case

(per leg)

0.50

°C/W

Operating temperature

mA

V

R

ΘJC

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Conditions

Tstg

Symbol

Maximum DC blocking voltage

Storage temperature

TC = 100 °C

VDC

Tj

Average forward current (per pkg)

IF(AV)

Maximum instantaneous forward voltage (per

leg)

Maximum instantaneous reverse

current at rated DC blocking voltage

(per leg)

IR

Tj = 100 °C

tp = 8.3 ms, half sine

IFSM

Peak forward surge current

(per leg)

IFM = 80 A, Tj = 25 °C

Tj = 25 °C

VF

www.genesicsemi.com/silicon-products/schottky-rectifiers/

1

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FST8360M 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

FST8360M 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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FST8360M 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

FST8360M 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - FST8360M

类似说明 - FST8360M

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