HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6857

Issued Date : 1994.01.25

Revised Date : 2002.10.25

Page No. : 1/2

HMBD2003, HMBD2003C, HMBD2003S

HSMC Product Specification

HMBD2003\C\S

Description

The HMBD2003\C\S are general purpose diodes fabricated in planar

technology, and encapsulated in small plastic SMD SOT-23 package.

Features

• Small plastic SMD package

• Switching speed: max. 50 nS

• General application:

Continuous reverse voltage: Max. 200 V

Repetitive peak reverse voltage: Max. 250 V

Repetitive peak forward current: Max. 625 mA

°C)

Characteristic

Symbol

Value

Unit

HMBD2003 Repetitive Peak Reverse Voltage

250

HMBD2003C Repetitive Peak Reverse Voltage

250

HMBD2003S Repetitive Peak Reverse Voltage

VRRM

250

V

HMBD2003 Continuous reverse voltage

200

HMBD2003C Continuous reverse voltage

200

HMBD2003S Continuous reverse voltage

VR

200

V

Forward Continuous Current at Ta=25

°C

lF

225

mA

Repetitive Peak Forward Current at Ta=25

°C

IFRM

625

mA

Surge Forward Current at t =1mS, Ta=25

°C

IFSM

1

A

Power Dissipation

PD

250 Max

mV

Junction Temperature

Tj

150

°C

Storage Temperature Range

Tstg

-65~+150

°C

°C)

Characteristic

Symbol

Condition

Min

Max

Unit

VF(1)

IF=100mA

-

1

Forward Voltage

VF(2)

IF=200mA

-

1.25

V

HMBD2003 Reverse Current

VR=200V

-

100

HMBD2003C Reverse Current

VR=200V

-

100

HMBD2003S Reverse Current

IR

VR=200V

-

100

nA

Total Capacitance

CT

VR=0V, f=1MHz

5

-

pF

Reverse Recovery Time

Trr

IF=30mA to IR=30mA

RL=100

Ω measured at

IR=3mA

50

-

nS

BV

R

BV

R

IR=100uA

250

-

V

SOT-23