GA01PNS80-CAL datasheet(1/3 Pages) GENESIC

部件名	GA01PNS80-CAL

功能描述	Silicon Carbide PiN Diode Chip

PDF	3 Pages

Scroll/Zoom	100%

制造商	GENESIC [GeneSiC Semiconductor, Inc.]

网页	http://www.genesicsemi.com/

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Electrical Datasheet*

GA01PNS80-CAL

Feb 2013

http://www.genesicsemi.com/index.php/hit-sic/baredie

Silicon Carbide

PiN Diode Chip

Features

 8 kV blocking

 250 °C operating temperature

 Fast turn off characteristics

 Soft reverse recovery characteristics

 Ultra-Fast high temperature switching

Advantages

Applications

 Industry’s lowest conduction losses

 Reduced stacking

 Reduced system complexity/Increased reliability

 Voltage Multiplier

 Ignition/Trigger Circuits

 Oil/Downhole

 Lighting

 Defense

Maximum Ratings at Tj = 250 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

Repetitive peak reverse voltage

VRRM

8

kV

Continuous forward current

IF

TC ≤ 150 °C

2

A

RMS forward current

IF(RMS)

TC ≤ 150 °C

1

A

Operating and storage temperature

Tj , Tstg

-55 to 250

°C

Electrical Characteristics at Tj = 250 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Diode forward voltage

VF

IF = 2 A, Tj = 25 °C

4.6

4.8

V

IF = 2 A, Tj = 225 °C

3.9

4.5

Reverse current

IR

VR = 8 kV, Tj = 25 °C

0.1

3

µA

VR = 8 kV, Tj = 175 °C

50

Total reverse recovery charge

Qrr

IF ≤ IF,MAX

dIF/dt = 70 A/μs

Tj = 225 °C

VR = 1000 V

IF = 1.5 A

558

nC

Switching time

ts

VR = 1000 V

IF = 1.5 A

< 236

ns

Total capacitance

C

VR = 1 V, f = 1 MHz, Tj = 25 °C

20

pF

VR = 400 V, f = 1 MHz, Tj = 25 °C

5

VR = 1000 V, f = 1 MHz, Tj = 25 °C

4

Total capacitive charge

QC

VR = 1000 V, f = 1 MHz, Tj = 25 °C

5.34

nC

*For chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with GeneSiC

Semiconductor).

类似零件编号 - GA01PNS80-CAL

制造商	部件名	数据表	功能描述
GeneSiC Semiconductor, ...	GA01PNS80-CAL	396Kb / 6P	Silicon Carbide PiN Diode Chip

More results

类似说明 - GA01PNS80-CAL

制造商	部件名	数据表	功能描述
GeneSiC Semiconductor, ...	GA01PNS80-CAU	299Kb / 4P	Silicon Carbide PiN Diode Chip
	GA01PNS100-CAL	261Kb / 3P	Silicon Carbide PiN Diode Chip
	GA01PNS100-CAU	261Kb / 3P	Silicon Carbide PiN Diode Chip
	GA01PNS150-CAU	295Kb / 4P	Silicon Carbide PiN Diode Chip
	GA01PNS80-CAL	396Kb / 6P	Silicon Carbide PiN Diode Chip
	GA01PNS80-CAU	385Kb / 6P	Silicon Carbide PiN Diode Chip
	GA01PNS100-CAL	394Kb / 6P	Silicon Carbide PiN Diode Chip
	GA01PNS100-CAU	372Kb / 6P	Silicon Carbide PiN Diode Chip
	GA01PNS150-CAU	369Kb / 6P	Silicon Carbide PiN Diode Chip
	GA01PNS150-201	932Kb / 5P	Silicon Carbide PiN Diode

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GA01PNS80-CAL 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

GA01PNS80-CAL 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - GA01PNS80-CAL

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GA01PNS80-CAL 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc.

GA01PNS80-CAL 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc.

类似零件编号 - GA01PNS80-CAL

类似说明 - GA01PNS80-CAL

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