HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6859

Issued Date : 1998.02.01

Revised Date : 2001.10.25

Page No. : 1/3

HMBT4124

HSMC Product Specification

HMBT4124

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HMBT4124 is designed for general purpose switching and

amplifier applications.

Absolute Maximum Ratings

• Maximum Temperatures

Storage Temperature ........................................................................................... -55 ~ +150

°C

Junction Temperature.................................................................................................... +150

°C

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ............................................................................... 225 mW

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage ......................................................................................... 30 V

VCEO Collector to Emitter Voltage...................................................................................... 25 V

VEBO Emitter to Base Voltage .............................................................................................. 5 V

IC Collector Current........................................................................................................ 200 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

30

-

-

V

IC=10uA, IE=0

BVCEO

25

-

-

V

IC=1mA, IB=0

BVEBO

5

-

-

V

IE=10uA, IC=0

ICBO

-

-

50

nA

VCB=20V

IEBO

-

-

50

nA

VEB=3V

*VCE(sat)

-

-

300

mV

IC=50mA, IB=5mA

*VBE(sat)

-

-

950

mV

IC=50mA, IB=5mA

*hFE1

120

-

360

VCE=1V, IC=2mA

*hFE2

60

-

-

VCE=1V, IC=50mA

fT

300

-

-

MHz

VCE=20V, IC=10mA, f=1MHz

Cob

-

-

4

pF

VCB=5V, IE=0, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

SOT-23