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BF908-R_2015 数据表(PDF) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd.

部件名 BF908-R_2015
功能描述  Dual-gate MOS-FETs
PDF  9 Pages
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制造商  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
网页  http://www.jmnic.com
标志 JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BF908-R_2015 数据表(HTML) 4 Page - Quanzhou Jinmei Electronic Co.,Ltd.

  BF908-R_2015 Datasheet HTML 1Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_2015 Datasheet HTML 2Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_2015 Datasheet HTML 3Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_2015 Datasheet HTML 4Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_2015 Datasheet HTML 5Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_2015 Datasheet HTML 6Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_2015 Datasheet HTML 7Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_2015 Datasheet HTML 8Page - Quanzhou Jinmei Electronic Co.,Ltd. BF908-R_2015 Datasheet HTML 9Page - Quanzhou Jinmei Electronic Co.,Ltd.  
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NXP Semiconductors
Product specification
Dual-gate MOS-FETs
BF908; BF908R
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common source; Tamb =25 °C; VDS =8V; VG2-S =4V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
BF908
500
K/W
BF908R
550
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
±V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S =10mA
8
−
20
V
±V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S =10mA
8
−
20
V
−V(P)G1-S
gate 1-source cut-off voltage
VG2-S =4V; VDS =8V; ID =20 µA −−
2V
−V(P)G2-S
gate 2-source cut-off voltage
VG1-S =4V; VDS =8V; ID =20 µA −−
1.5
V
IDSS
drain-source current
VG2-S =4V; VDS =8V; VG1-S = 0
3
1527mA
±IG1-SS
gate 1 cut-off current
VG2-S =VDS = 0; VG1-S =5V
−−
50
nA
±IG2-SS
gate 2 cut-off current
VG1-S =VDS = 0; VG2-S =5V
−−
50
nA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
y
fs
forward transfer admittance
pulsed; Tj =25 °C; f = 1 MHz
36
43
50
mS
Cig1-s
input capacitance at gate 1
f = 1 MHz
2.4
3.1
4
pF
Cig2-s
input capacitance at gate 2
f = 1 MHz
1.2
1.8
2.5
pF
Cos
output capacitance
f = 1 MHz
1.2
1.7
2.2
pF
Crs
reverse transfer capacitance
f = 1 MHz
20
30
45
fF
F
noise figure
f = 200 MHz; GS = 2 mS; BS =BSopt
−
0.6
1.2
dB
f = 800 MHz; GS =GSopt; BS =BSopt
−
1.5
2.5
dB
Rev. 03 - 14 November 2007
4 of 9



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