STS05DTP03 datasheet(4/10 Pages) STMICROELECTRONICS

部件名	STS05DTP03

功能描述	Dual NPN-PNP complementary bipolar transistor

PDF	10 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

4 / 10 page

Electrical characteristics

STS05DTP03

4/10

Table 5.

Q2-PNP electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = -30 V

-10

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = -30 V

-1

µA

IEBO

Emitter cut-off current

(IB = 0)

VEB = -6 V

-10

µA

V(BR)CEO

(1)

Collector-emitter breakdown

voltage (IB = 0)

IC = -10 mA

-30

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = -1 A

IB = -10 mA

IC = -3 A

IB = -100 mA

IC = -5 A

IB = -250 mA

-0.25

-0.7

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -1 A

IB = -10 mA

-1.0

hFE

(1)

DC current gain

IC = -1 A

VCE = -2 V

IC = -3 A

VCE = -2 V

IC = -5 A

VCE = -2 V

IC = -10 A

VCE = -2 V

100

140

100

300

Pulsed duration = 300 µs, duty cycle

≤1.5 %

Obsolete

Product(s)

- Obsolete

Product(s)

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