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STTH2R02UY 数据表(PDF) 4 Page - STMicroelectronics

部件名 STTH2R02UY
功能描述  Automotive ultrafast recovery diode
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH2R02UY 数据表(HTML) 4 Page - STMicroelectronics

  STTH2R02UY Datasheet HTML 1Page - STMicroelectronics STTH2R02UY Datasheet HTML 2Page - STMicroelectronics STTH2R02UY Datasheet HTML 3Page - STMicroelectronics STTH2R02UY Datasheet HTML 4Page - STMicroelectronics STTH2R02UY Datasheet HTML 5Page - STMicroelectronics STTH2R02UY Datasheet HTML 6Page - STMicroelectronics STTH2R02UY Datasheet HTML 7Page - STMicroelectronics STTH2R02UY Datasheet HTML 8Page - STMicroelectronics  
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Characteristics
STTH2R02-Y
4/8
Doc ID 17934 Rev 1
Figure 5.
Junction capacitance versus
reverse applied voltage
(typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
1
10
100
1
10
100
1000
C(pF)
F=1MHz
V
osc=30mVRMS
T
j=25°C
VR(V)
0
10
20
30
40
50
60
10
100
1000
Q
RR(nC)
I
F=2A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
Figure 7.
Reverse recovery time versus dIF/dt
(typical values)
Figure 8.
Peak reverse recovery current
versus dIF/dt (typical values)
0
10
20
30
40
50
60
10
100
1000
t
RR(ns)
I
F=2A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
0
1
2
3
4
5
6
10
100
1000
I
RM(A)
I
F=2A
V
R=160V
T
j=125°C
T
j=25°C
dIF/dt(A/µs)
Figure 9.
Dynamic parameters versus
junction temperature
Figure 10.
Thermal resistance, junction to
ambient, versus copper surface
under each lead
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
25
50
75
100
125
150
Q
RR;IRM [Tj]/ QRR;IRM [Tj=125°C]
I
RM
Q
RR
I
F=2A
V
R=160V
Tj(°C)
0
20
40
60
80
100
120
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R
th(j-a)(°C/W)
SCU(cm²)
Epoxy printed circuit board,
copper thickness = 35 µm



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