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KBPC1506W 数据表(PDF) 1 Page - GeneSiC Semiconductor, Inc. |
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KBPC1506W 数据表(HTML) 1 Page - GeneSiC Semiconductor, Inc. |
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1 / 3 page ![]() VRRM = 600 V - 1000 V IO = 15 A Features KBPC-T/W Package Mechanical Data Parameter Symbol KBPC1506T/W KBPC1508T/W Unit • High efficiency • Metal case Case: Mounted in the bridge encapsulation Conditions • Not ESD Sensitive • Silicon junction Mounting position: Hole for #10 screw • Types from 600 V to 1000 V VRRM Single Phase Silicon Bridge Rectifier KBPC1506T/W thru KBPC1510T/W KBPC1510T/W Maximum ratings at Tc = 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW uses KBPC-W package) Polarity: Marked on case Repetitive peak reverse voltage VRRM 600 800 V RMS reverse voltage VRMS 420 560 V DC blocking voltage VDC 600 800 V Operating temperature Tj -55 to 150 -55 to 150 °C Storage temperature Tstg -55 to 150 -55 to 150 °C Parameter Symbol KBPC1506T/W KBPC1508T/W Unit Maximum average forward rectified current IO 15 15 A Peak forward surge current IFSM 300 300 A Maximum instantaneous forward voltage per leg 1.1 1.1 55 500 500 Typical junction capacitance 1 Cj 300 300 pF Thermal characteristics Typical thermal resistance 2 R ΘJC 2.3 2.3 °C/W 1 - Measured ay 1 MHz and applied reverse voltage of 4.0 V D.C. 2 - Device mounted on 300 mm x 300 mm x 1.6 mm Cu plate heatsink 300 2.3 V Electrical characteristics at Tc = 25 °C, unless otherwise specified Tc = 25 °C IF = 7.5 A Conditions 1000 700 -55 to 150 Maximum DC reverse current at rated DC blocking voltage per leg IR Tc = 100 °C μA 5 -55 to 150 1000 KBPC1510T/W Single phase, half sine wave, 60 Hz, resistive or inductive load For capacitive load derate current by 20% Tc = 55 °C 15 8.3 ms half sine-wave 300 500 VF 1.1 www.genesicsemi.com/silicon-products/bridge-rectifiers/ 1 |
类似零件编号 - KBPC1506W |
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类似说明 - KBPC1506W |
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