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TMBAT49FILM 数据表(PDF) 2 Page - STMicroelectronics |
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TMBAT49FILM 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() Characteristics TMBAT49 2/6 Doc ID 3484 Rev 2 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 80 V IF Forward continuous current Tj = 70 °C 500 mA IFRM Repetitive peak forward current tp = 1 s δ ≤ 0.5 3A IFSM Surge non repetitive forward current tp = 10 ms 10 A Tstg Storage temperature range - 65 to +150 °C Tj Operating junction temperature range - 65 to +125 °C TL Maximum lead soldering temperature during 15 s 260 °C Table 2. Thermal parameter Symbol Parameter Value Unit Rth(j-l) Junction to lead 110 °C/W Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp ≤ 300 µs, δ < 2% Reverse leakage current Tj = 25 °C VR = 80 V - - 200 µA VF (1) Forward voltage drop Tj = 25 °C IF = 10 mA - - 0.32 V IF = 100 mA - - 0.42 IF = 1 A - - 1 Table 4. Dynamic characteristics (Tj = 25 °C) Symbol Parameter Test conditions Min. Typ. Max. Unit C Diode capacitance F = 1 MHz VR = 0 V - 120 - pF VR = 5 V - 35 - |
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