HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HT200205

Issued Date : 1993.05.15

Revised Date : 2002.05.03

Page No. : 1/4

HT882

HSMC Product Specification

HT882

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HT882 is designed for using in output stage of 1w audio amplifier,

voltage regulator, DC-DC converter and relay driver.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Ta=25

°C) ....................................................................................... 1 W

Total Power Dissipation (Tc=25

°C) ..................................................................................... 10 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage....................................................................................... 40 V

BVCEO Collector to Emitter Voltage.................................................................................... 30 V

BVEBO Emitter to Base Voltage............................................................................................ 5 V

IC Collector Current (DC) ...................................................................................................... 3 A

IC Collector Current (Pulse) .................................................................................................. 7 A

IB Base Current (DC) ......................................................................................................... 0.6 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

-

V

IC=100uA

BVCEO

30

-

-

V

IC=1mA

BVEBO

5

-

-

V

IE=10uA

ICBO

-

-

1

uA

VCB=30V

IEBO

-

-

1

uA

VEB=3V

*VCE(sat)

-

0.3

0.5

V

IC=2A, IB=0.2A

*VBE(sat)

-

1

2

V

IC=2A, IB=0.2A

*hFE1

30

150

-

IC=20mA, VCE=2V

*hFE2

100

200

500

IC=1A, VCE=2V

fT

-

90

-

MHz

IC=0.1A, VCE=5V

Cob

-

45

-

pF

VCB=10V, f=1MHz, IE=0

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Classification Of hFE2

Rank

Q

P

E

Range

100-200

160-320

250-500

TO-126