HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE9216-A

Issued Date : 1998.07.01

Revised Date : 1999.08.01

Page No. : 1/3

HSMC Product Specification

HTIF127

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIF127 is designed for use in general purpose amplifier and

low-speed switching applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) .................................................................................... 45 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ................................................................................... -100 V

BVCEO Collector to Emitter Voltage................................................................................ -100 V

BVEBO Emitter to Base Voltage .......................................................................................... -5 V

IC Collector Current (Pulse)................................................................................................. -8 A

IC Collector Current (Continuous)........................................................................................ -5 A

IB Base Current ............................................................................................................ -120 mA

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-100

-

-

V

IC=-1mA

*BVCEO

-100

-

-

V

IC=-100mA

ICBO

-

-

-200

uA

VCB=-100V

ICEO

-

-

-500

uA

VCE=-50V

IEBO

-

-

-2

mA

VEB=-5V

*VCE(sat)1

-

-

-2

V

IC=-3A, IB=-12mA

*VCE(sat)2

-

-

-4

V

IC=-5A, IB=-20mA

*VBE(on)

-

-

-2.5

V

IC=-3A, VCE=-3V

*hFE1

1

-

-

K

IC=-0.5A, VCE=-3V

*hFE2

1

-

-

K

IC=-3A, VCE=-3V

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%