HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6743

Issued Date : 1998.07.01

Revised Date : 2001.08.30

Page No. : 1/3

HTIP105

HSMC Product Specification

HTIP105

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP105 is designed for monolithic construction with built in base-

emitter shunt resistors industrial.

°C)

• Maximum Temperatures

Storage Temperature .......................................................................................................... -55 ~ +150

°C

Junction Temperature .................................................................................................. +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) ................................................................................................... 80 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage .................................................................................................... -60 V

BVCEO Collector to Emitter Voltage................................................................................................. -60 V

BVEBO Emitter to Base Voltage ......................................................................................................... -5 V

IC Collector Current ............................................................................................................................ -8 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-60

-

-

V

IC=-1mA

BVCEO

-60

-

-

V

IC=-30mA

BVEBO

-5

-

-

V

IE=-0.1mA

ICEO

-

-

-50

uA

VCE=-30V

ICBO

-

-

-50

uA

VCB=-60V

IEBO

-

-

-8

mA

VEB=-5V

*VCE(sat)1

-

-

-2

V

IC=-3A, IB=-6mA

*VCE(sat)2

-

-

-2.5

V

IC=-8A, IB=-80mA

*VBE(on)

-

-

-2.8

V

IC=-8A, VCE=-4V

*hFE1

1000

-

20000

IC=-3A, VCE=-4V

*hFE2

200

-

-

IC=-8A, VCE=-4V

Cob

-

-

300

pF

VCE=-10V, f=100KHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%

Darlington Schematic

R2

R1

C

E

B