HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6712

Issued Date : 1993.01.13

Revised Date : 2002.05.07

Page No. : 1/4

HTIP122

HSMC Product Specification

HTIP122

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP122 is designed for use in general purpose amplifier and low-

speed switching applications.

°C)

• Maximum Temperatures

Storage Temperature ........................................................................................................ -55 ~ +150

°C

Junction Temperature ................................................................................................ +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C)................................................................................................. 65 W

Total Power Dissipation (Ta=25

°C)................................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage ................................................................................................. 100 V

BVCEO Collector to Emitter Voltage .............................................................................................. 100 V

BVEBO Emitter to Base Voltage ....................................................................................................... 5 V

IC Collector Current (Continuous)...................................................................................................... 5 A

IC Collector Current (Peak)................................................................................................................ 8 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

100

-

-

V

IC=1mA, IE=0

*BVCEO

100

-

-

V

IC=100mA

ICBO

-

-

200

uA

VCB=100V

ICEO

-

-

500

uA

VCE=50V

IEBO

-

-

2

mA

VEB=5V

*VCE(sat)1

-

-

2

V

IC=3A, IB=12mA

*VCE(sat)2

-

-

4

V

IC=5A, IB=20mA

*VBE(on)

-

-

2.5

V

IC=3A, VCE=3V

*hFE1

1

-

-

K

IC=0.5A, VCE=3V

*hFE2

1

-

-

K

IC=3A, VCE=3V

Cob

-

-

200

pF

VCB=10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

Darlington Schematic

R2

R1

C

E

B

TO-220