HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6768

Issued Date : 1994.07.29

Revised Date : 2002.02.20

Page No. : 1/3

HTIP29C

HSMC Product Specification

HTIP29C

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP29C is designed for use in general purpose amplifier and

switching applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -55 ~ +150

°C

Junction Temperature .................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) ..................................................................................... 30 W

Total Power Dissipation (Ta=25

°C) ....................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... 100 V

BVCEO Collector to Emitter Voltage.................................................................................. 100 V

BVEBO Emitter to Base Voltage............................................................................................ 5 V

IC Collector Current............................................................................................................... 1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

100

-

-

V

IC=1mA, IE=0

BVCEO

100

-

-

V

IC=30mA, IB=0

ICES

-

-

200

uA

VCE=100V, IB=0

ICEO

-

-

300

uA

VCE=60V, IB=0

IEBO

-

-

1

mA

VEB=5V

*VCE(sat)

-

-

0.7

V

IC=1A, IB=125mA

*VBE(on)

-

-

1.3

V

IC=1A, VCE=4V

*hFE1

40

-

-

IC=0.2A, VCE=4V

*hFE2

15

-

75

IC=1A, VCE=4V

fT

3

-

-

MHz

IC=0.2A, VCE=10V, f=1MHz

*Pulse Test: Pulse Width

≤380us, Duty Cycle≤2%

TO-220