HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE6726-A

Issued Date : 1998.07.01

Revised Date : 1999.08.01

Page No. : 1/3

HSMC Product Specification

HTIP49

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP49 is designed for high voltage and switching applications.

°C)

• Maximum Temperatures

Storage Temperature ............................................................................................ -50 ~ +150

°C

Junction Temperature ................................................................................... +150

°C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25

°C) .................................................................................... 40 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage .................................................................................... 450 V

BVCEO Collector to Emitter Voltage................................................................................. 350 V

BVEBO Emitter to Base Voltage ........................................................................................... 5 V

IC Collector Current .............................................................................................................. 1 A

°C)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

450

-

-

V

IC=1mA

BVCEO

350

-

-

V

IC=30mA

BVEBO

5

-

-

V

IE=0.1mA

IEBO

-

-

1

mA

VEB=5V

ICEO

-

-

1

mA

VCE=250V

ICES

-

-

1

mA

VCE=450V

*VCE(sat)

-

-

1

V

IC=1A, IB=0.2A

VBE(on)

-

-

1.5

V

IC=1A, VCE=10V

*hFE1

30

-

150

IC=0.3A, VCE=10V

*hFE2

10

-

-

IC=1A, VCE=10V

fT

10

-

-

MHz

IC=0.2A, VCB=10V, f=2KHz

*Pulse Test : Pulse Width

≤380us, Duty Cycle≤2%