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GL3276 数据表(PDF) 2 Page - Hynix Semiconductor

部件名 GL3276
功能描述  Less changes of malfunction associated with a high-frequency lighting fluorscent lamp internal trap circuit.
PDF  4 Pages
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制造商  HYNIX [Hynix Semiconductor]
网页  http://www.skhynix.com/kor/main.do
标志 HYNIX - Hynix Semiconductor

GL3276 数据表(HTML) 2 Page - Hynix Semiconductor

  GL3276 Datasheet HTML 1Page - Hynix Semiconductor GL3276 Datasheet HTML 2Page - Hynix Semiconductor GL3276 Datasheet HTML 3Page - Hynix Semiconductor GL3276 Datasheet HTML 4Page - Hynix Semiconductor  
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GL3276A
2
Absolute Maximum Ratings(Ta=25 ¡ É
)
SYMBOL
PARAMETER
VALUE
UNIT
VCC
Supply voltage
6.0
V
IOUT
Output Current
2.5
mA
PD
Allowable power
dissipation
270
mW
TOPR
Operating temperature
- 20 to +75
¡ É
TSTG
Storage temperature
-40 to +125
¡ É
Recommended Operating Condition
SYMBOL
PARAMETER
MIN
TYP
MAX
UNIT
VCC
Supply voltage
4.5
5.0
5.5
V
fIN
Input frequency
30
38
80
KHz
Electrical characteristics (VCC = 5.0V, Ta = 2.5¡ É
)
SYMBOL
PARAMETER
TESTCONDITION
MIN
TYP
MAX
UNIT
REMARK
ICC
Supply current
1.2
2.8
mA
VIN
Input voltage
IIN = 0A
IIN=-330
µA
2.0
0.6
2.5
0.8
3.1
1.7
V
AV
Voltage gain
fIN=38kHz
VIN=30 µVP-P
70
76
80
dB
FBW
BPF bandwidth
-3dB Bandwidth
VIN=30 µVP-P
2.0
2.5
3.0
KHz
rIN
Input impedance
fIN=38kHz CW
VIN=0.2 µVP-P
80
110
160
K§ Ù
note * 1
tPW1
fIN=38kHz
burstwave
VIN=500 µVP-P
440
770
µS
tPW2
Output pulse width
fIN=38kHz
burstwave
VIN=50mVP-P
440
770
µS
note * 1
VOL
Low Level
output voltage
0.2
0.4
V
VOH
Low Level
output voltage
4.8
5.0
V
Note 1 : r
IN
=
1
)
V
V
(
47
X
IN
K§ Ù
(where V
IN=input level, VX=test value)
2 : input burst
wave form
output pulse
600
µS
600
µS
38KHz Carrier



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