BLF368_2015 datasheet(7/16 Pages) JMNIC

7 / 16 page

1998 Jul 29

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF368

Fig.9

Power gain as a function of load power;

typical values per section.

Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA;

ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);

f = 225 MHz.

solid line: Th =25 °C. dotted line: Th =70 °C.

handbook, halfpage

500

100

200

300

400

MGP239

(dB)

PL (W)

Fig.10 Efficiency as a function of load power;

typical values per section.

Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA;

ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);

f = 225 MHz.

solid line: Th =25 °C. dotted line: Th =70 °C.

handbook, halfpage

100

500

200

300

400

MGP241

ηD

(%)

PL (W)

Fig.11 Load power as a function of input power;

typical values per section.

Class-AB operation; VDS = 32 V; IDQ =2 × 250 mA;

ZL = 1.34 + j0.34 Ω (per section); RGS = 536 Ω (per section);

f = 225 MHz.

solid line: Th =25 °C. dotted line: Th =70 °C.

handbook, halfpage

010

500

400

300

200

100

MGP240

(W)

PIN (W)

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