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ICS8701CYI 数据表(PDF) 4 Page - Integrated Circuit Systems |
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ICS8701CYI 数据表(HTML) 4 Page - Integrated Circuit Systems |
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4 / 13 page ![]() 8701I www.icst.com/products/hiperclocks.html REV. A MARCH 16, 2001 4 Integrated Circuit Systems, Inc. ICS8701I LOW SKEW ¸1, ¸2 CLOCK GENERATOR ABSOLUTE MAXIMUM RATINGS Supply Voltage 4.6V Inputs -0.5V to VDD + 0.5V Outputs -0.5V to VDDO + 0.5V Ambient Operating Temperature -40°C to 85°C Storage Temperature -65°C to 150°C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only and functional operation of product at these condition or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating condi- tions for extended periods may affect product reliability. TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, VDDI=VDDO=3.3V±5%, TA=-40°C TO 85°C l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U H I V t u p n I e g a t l o V h g i H , B L E S _ V I D , A L E S _ V I D , D L E S _ V I D , C L E S _ V I D , 0 N E _ K N A B E O / R M n , 1 N E _ K N A B V 5 6 4 . 3 = I D D V2 8 . 3V K L C _ S O M C V LV 5 6 4 . 3 = I D D V2 8 . 3V L I V t u p n I e g a t l o V w o L , B L E S _ V I D , A L E S _ V I D , D L E S _ V I D , C L E S _ V I D , 0 N E _ K N A B E O / R M n , 1 N E _ K N A B V 5 6 4 . 3 = I D D V3 . 0 -8 . 0V K L C _ S O M C V LV 5 6 4 . 3 = I D D V3 . 0 -3 . 1V H I I t u p n I t n e r r u C h g i H , B L E S _ V I D , A L E S _ V I D , D L E S _ V I D , C L E S _ V I D , 0 N E _ K N A B E O / R M n , 1 N E _ K N A B V 5 6 4 . 3 = N I V = I D D V5 A µ K L C _ S O M C V LV 5 6 4 . 3 = N I V = I D D V0 5 1A µ L I I t u p n I t n e r r u C w o L , B L E S _ V I D , A L E S _ V I D , D L E S _ V I D , C L E S _ V I D , 0 N E _ K N A B E O / R M n , 1 N E _ K N A B V 0 = N I V , V 5 6 4 . 3 = I D D V0 5 1 -A µ K L C _ S O M C V LV 0 = N I V , V 5 6 4 . 3 = I D D V5 -A µ H O Ve g a t l o V h g i H t u p t u O V 5 3 1 . 3 = O D D V = I D D V A m 6 3 - = H O I 6 . 2V L O Ve g a t l o V w o L t u p t u O V 5 3 1 . 3 = O D D V = I D D V A m 6 3 = L O I 5 . 0V l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U I D D Ve g a t l o V y l p p u S r e w o P t u p n I 5 3 1 . 33 . 35 6 4 . 3V O D D Ve g a t l o V y l p p u S r e w o P t u p t u O 5 3 1 . 33 . 35 6 4 . 3V D D It n e r r u C y l p p u S r e w o P t n e c s e i u Q V 5 6 4 . 3 = H I V = I D D V V 0 = L I V 0 0 1A m TABLE 4B. LVCMOS DC CHARACTERISTICS, VDDI=VDDO=3.3V±5%, TA=-40°C TO 85°C |
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