HTMS8x01 datasheet(8/57 Pages) NXP

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HTMS1x01_8x01

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Product data sheet

COMPANY PUBLIC

Rev. 3.3 — 17 October 2014

152933

8 of 57

NXP Semiconductors

HTMS1x01; HTMS8x01

HITAG µ transponder IC

Mechanical specification

8.1 Wafer specification

See Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”.

Table 4.

Wafer specification

Wafer

Designation

each wafer is scribed with batch number and wafer

number

Diameter

200 mm (8 inches)

Thickness

150 m ± 15 m

Process

CMOS 0.14

m

Batch size

25 wafers

PGDW

91981

Wafer backside

Material

Treatment

ground and stress release

Roughness

Ra max. 0.5 m, Rt max. 5 m

Chip dimensions

Die size without scribe

550 m x 550 m = 302500 m2

Scribe line width

X-dimension

m (scribe line width measured between nitride edges)

Y-dimension

m (scribe line width measured between nitride edges)

Number of pads

Passivation on front

Type

sandwich structure

Material

PE-nitride (on top)

Thickness

1.75

m total thickness of passivation

Au bump

Material

>99.9 % pure Au

Hardness

35 HV to 80 HV 0.005

Shear strength

>70 MPa

Height

m

Height uniformity

within a die

2 m

within a wafer

3 m

wafer to wafer

4 m

Bump flatness

1.5 m

Bump size

LA, LB

294 m  164 m

TEST, GND, VDD

m  60 m

variation

5 m

Under bump metallization

sputtered TiW

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