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FMMT591TA 数据表(PDF) 2 Page - Diodes Incorporated |
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FMMT591TA 数据表(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() FMMT591 Document number: DS33104 Rev. 6 - 2 2 of 7 www.diodes.com March 2014 © Diodes Incorporated FMMT591 A Product Line of Diodes Incorporated Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -7 V Continuous Collector Current IC -1 A Peak Pulse Current ICM -2 A Base Current IB -200 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 500 mW Thermal Resistance, Junction to Ambient (Note 5) RθJA 250 °C/W Thermal Resistance, Junction to Lead (Note 6) RθJL 197 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 7) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Thermal resistance from junction to solder-point (at the end of the collector lead). 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. |
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