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Plastic-Encapsulate Diodes

HIGH SPEED SWITCHING DIODE

FEATURES

Small surface mounting type

High Speed

High reliability with high surge current handing capability

MARKING: A

Maximum Ratings and Electrical Characteristics, Single Diode @TA=25

Parameter

Symbol

Limits

Unit

Peak reverse voltage

VR

M

90

V

DC reverse voltage

VR

80

V

Peak forward current

IF

M

225

mA

Mean rectifying current

IO

100

mA

Surge current (1s)

Isurge

500

mA

Junction temperature

Tj

125

Storage temperature

Tstg

-55~+125

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Forward voltage

VF

1.2

V

IF=100mA

Reverse current

IR

0.1

μA

VR=80V

Capacitance between terminals

CT

3.0

pF

VR=0.5V, f=1MHZ

Reverse recovery time

trr

4

ns

VR=6V,IF=10mA,RL=100Ω

SOD-523

-

+

1SS400

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/