IDT6116LA55TDB datasheet(9/11 Pages) IDT

9 / 11 page

6.42

IDT6116SA/LA

CMOS Static RAM 2K (16K x 8-Bit)

Military, Commercial, and In dustrial Temperature Ranges

Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5,7)

Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,3,5,7)

NOTES:

WE or CS must be HIGH during all address transitions.

2. A write occurs during the overlap of a LOW

CS and a LOW WE.

3. tWR is measured from the earlier of

CS or WE going HIGH to the end of the write cycle.

4. During this period, the I/O pins are in the output state and the input signals must not be applied.

5. If the

CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.

6. Transition is measured ±500mV from steady state.

OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers

to turn off and data to be placed on the bus for the required tDW. If

OE is HIGH during a WE controlled write cycle, this requirement does not apply and the write pulse

is the specified tWP. For a

CS controlled write cycle, OE may be LOW with no degradation to tCW.

ADDRESS

DATAOUT

DATAIN

tWC

tAW

3089 drw 09

tAS

tWHZ

(6)

(4)

tDW

tDH

(4)

tOW

tWR

tCHZ

(6)

tWP(7)

(6)

PREVIOUS DATA VALID

DATA

VALID

DATA VALID

(3)

DATAIN

tWC

tAW

tCW

tWR

(3)

tDW

tDH

tAS

3089 drw 10

DATA VALID

ADDRESS

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