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IDT6167LA55D 数据表(PDF) 7 Page - Integrated Device Technology

部件名 IDT6167LA55D
功能描述  CMOS STATIC RAM 16K (16K x 1-BIT)
PDF  8 Pages
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制造商  IDT [Integrated Device Technology]
网页  http://www.idt.com
标志 IDT - Integrated Device Technology

IDT6167LA55D 数据表(HTML) 7 Page - Integrated Device Technology

  IDT6167LA55D Datasheet HTML 1Page - Integrated Device Technology IDT6167LA55D Datasheet HTML 2Page - Integrated Device Technology IDT6167LA55D Datasheet HTML 3Page - Integrated Device Technology IDT6167LA55D Datasheet HTML 4Page - Integrated Device Technology IDT6167LA55D Datasheet HTML 5Page - Integrated Device Technology IDT6167LA55D Datasheet HTML 6Page - Integrated Device Technology IDT6167LA55D Datasheet HTML 7Page - Integrated Device Technology IDT6167LA55D Datasheet HTML 8Page - Integrated Device Technology  
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5.2
7
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF WRITE CYCLE NO. 1, (
WE
WE CONTROLLED TIMING)(1, 2, 4)
TIMING WAVEFORM OF WRITE CYCLE NO. 2, (
CS
CS CONTROLLED TIMING)(1, 2, 4)
NOTES:
1.
WE or CS must be inactive during all address transitions.
2. A write occurs during the overlap of a LOW
CS and a LOW WE.
3. tWR is measured from the earlier of
CS or WE going HIGH to the end of the write cycle.
4. If the
CS low transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state.
5. Transition is measured
±200mV from steady state.
6. During this period, the I/O pins are in the output state and the input signals must not be applied.
CS
2981 drw 08
tAW
tWR
tDW
DATAIN
ADDRESS
tWC
WE
tWP
tDH
DATAOUT
tOW
tAS
DATAIN VALID
(5)
PREVIOUS DATAOUT VALID
(6)
DATAOUT
VALID (6)
(3)
tWHZ
(5)
tCHZ
(5)
t
CS
2981 drw 09
tAW
tDW
DATAIN
ADDRESS
tWC
WE
tCW
tDH
tAS
tWR
DATAIN VALID
(3)



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