ADM223 datasheet(2/16 Pages) AD

2 / 16 page

REV. B

–2–

ADM223/ADM230L–ADM241L–SPECIFICATIONS

ADM232L, ADM234L, ADM236L, ADM238L, ADM239L, ADM241L); VCC = 5 V

5% (ADM230L, ADM233L, ADM235L, ADM237L); V+ = 7.5 V to

13.2 V (ADM231L and ADM239L); C1–C4 = 1.0

F Ceramic. All Specifications TMIN to TMAX unless otherwise noted.)

Parameter

Min

Typ

Max Unit

Test Conditions/Comments

Output Voltage Swing

±5

±9

Volts

All Transmitter Outputs Loaded with 3 k

Ω to Ground

VCC Power Supply Current

2.5

6.0

No Load, (ADM232L only)

3.5

No Load

V+ Power Supply Current

1.5

No Load, V+ = 12 V ADM231L and ADM239L Only

Shutdown Supply Current

µA

Input Logic Threshold Low, VINL

0.8

TIN, EN, SD, EN, SD

Input Logic Threshold High, VINH

2.4

TIN, EN, SD, EN, SD

Logic Pull-Up Current

µAT

IN = 0 V

RS-232 Input Voltage Range

–30

+30

RS-232 Input Threshold Low

0.8

1.2

RS-232 Input Threshold High

1.6

2.4

RS-232 Input Hysteresis

0.25

RS-232 Input Resistance

Ω

TA = 0

°C to 85°C

TTL/CMOS Output Voltage Low, VOL

0.4

TTL/CMOS Output Voltage High, VOH

3.5

IOUT = –1.0 mA

TTL/CMOS Output Leakage Current

0.05

±10 µA

EN = V

CC, 0 V

≤ R

OUT

≤ V

Output Enable Time (TEN)

250

ADM223, ADM235L, ADM236L, ADM239L, ADM241L

(Figure 25. CL = 150 pF)

Output Disable Time (TDIS)

ADM223, ADM235L, ADM236L, ADM239L, ADM241L

(Figure 25. RL = 1 k

Ω)

Propagation Delay

0.3

µs

RS-232 to TTL

Transition Region Slew Rate

µsR

L = 3 k

Ω, C

L = 2500 pF

Measured from +3 V to –3 V or –3 V to +3 V

Output Resistance

300

Ω

VCC = V+ = V– = 0 V, VOUT =

±2 V

RS-232 Output Short Circuit Current

±10

Thermal Impedance,

N-14 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140

°C/W

N-16 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135

°C/W

N-20 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125

°C/W

N-24 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120

°C/W

N-24A DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110

°C/W

R-16 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105

°C/W

R-20 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105

°C/W

R-24 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85

°C/W

R-28 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80

°C/W

RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100

°C/W

Q-14 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105

°C/W

Q-16 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100

°C/W

Q-20 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100

°C/W

Q-24 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55

°C/W

D-24 Ceramic . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50

°C/W

Operating Temperature Range

Commercial (J Version) . . . . . . . . . . . . . . . . . . . . 0 to 70

°C

Industrial (A Version) . . . . . . . . . . . . . . .

–40

°C to +85°C

Storage Temperature Range . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature, Soldering . . . . . . . . . . . . . . . . . . . 300

°C

Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . 215

°C

Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220

°C

*This is a stress rating only; functional operation of the device at these or any other

conditions above those indicated in the operational sections of this specification is

not implied. Exposure to absolute maximum rating conditions for extended

periods of time may affect reliability.

(VCC = 5 V

10% (ADM223, ADM231L,

NOTES

1Guaranteed by design.

Specifications subject to change without notice.

ABSOLUTE MAXIMUM RATINGS

(TA = 25

°C unless otherwise noted)

VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V

V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC – 0.3 V) to +14 V

V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –14 V

Input Voltages

TIN . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)

RIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

±30 V

Output Voltages

TOUT . . . . . . . . . . . . . . . . . . (V+, + 0.3 V) to (V–, – 0.3 V)

ROUT . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)

Short Circuit Duration

TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous

Power Dissipation

N-14 DIP (Derate 10 mW/

°C above 70°C) . . . . . . 800 mW

N-16 DIP (Derate 10.5 mW/

°C above 70°C) . . . . . 840 mW

N-20 DIP (Derate 11 mW/

°C above 70°C) . . . . . . 890 mW

N-24 DIP (Derate 13.5 mW/

°C above 70°C) . . . . 1000 mW

N-24A DIP (Derate 13.5 mW/

°C above 70°C) . . . 500 mW

R-16 SOIC (Derate 9 mW/

°C above 70°C) . . . . . . 760 mW

R-20 SOIC (Derate 9.5 mW/

°C above 70°C) . . . . 800 mW

R-24 SOIC (Derate 12 mW/

°C above 70°C) . . . . . 850 mW

R-28 SOIC (Derate 12.5 mW/

°C above 70°C) . . . 900 mW

RS-28 SSOP (Derate 10 mW/

°C above 70°C) . . . . 900 mW

Q-14 Cerdip (Derate 10 mW/

°C above 70°C) . . . . 720 mW

Q-16 Cerdip (Derate 10 mW/

°C above 70°C) . . . . 800 mW

Q-20 Cerdip (Derate 11.2 mW/

°C above 70°C) . . . . 890 mW

Q-24 Cerdip (Derate 12.5 mW/

°C above 70°C) . . . 1000 mW

D-24 Ceramic (Derate 20 mW/

°C above 70°C) . . 1000 mW

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