MS23P01 datasheet(2/6 Pages) BWTECH

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MS23P01

P-Channel 20-V (D-S) MOSFET

Publication Order Number: [MS23P01]

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (TA=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

-20

VGS

Gate-Source Voltage

±8

Continuous Drain Current

a (T

A =25°C)

-2.6

Continuous Drain Current

a (T

A =70°C)

-1.5

IDM

Pulsed Drain Current

-10

Continuous Source Current (Diode Conduction)

±1.6

Power Dissipation

a (T

A =25°C)

1.25

Power Dissipation

a (T

A =70°C)

0.8

TJ/TSTG

Operating Junction and Storage Temperature

-55 to +150

°C

THERMAL RESISTANCE RATINGS

Symbol

Parameter

Maximum

Units

RθJA

Maximum Junction-to-Ambient

a (t <= 5 sec)

100

°C/W

Maximum Junction-to-Ambient

a (Steady-State)

166

Notes:

Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Static

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = -250μA

-0.4

-1

IGSS

Gate-Body Leakage

VDS = 0 V , VGS = ±8 V

±100

IDSS

Zero Gate Voltage Drain Current

VDS = -16 V , VGS = 0 V

VDS = -16 V , VGS = 0 V , TJ= 55°C

-1

-10

ID(on)

On-State Drain Current

VDS = -5 V, VGS = -4.5 V

-3

DS(on)

Drain-Source On-Resistance

VGS = -4.5 V, ID = -2.6 A

VGS = -2.5V, ID = -2.1 A

0.130

0.190

gfs

Forward Tranconductance

VDS = -5 V, ID = -2.8 A

VSD

Diode Forward Voltage

IS = -1.6 V, VGS = 0 V

-0.70

Dynamic

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

td(on)

Turn-On Delay Time

VDD = -5 V , RL = -5 OHM

VGEN = -4.5 V , RG = 6 OHM

6.5

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

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