5.2

4

IDT6167SA/LA

CMOS STATIC RAM 16K (16K x 1-BIT)

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DC ELECTRICAL CHARACTERISTICS

± 10%

IDT6167SA

IDT6167LA

Symbol

Parameter

Test Condition

Min.

Max.

Min.

Max.

Unit

Input Leakage Current

MIL

—

10

—

5

µA

COM’L

—

5

—

2

Output Leakage Current

MIL

—

10

—

5

µA

COM’L

—

5

—

2

Output Low Voltage

—

0.4

—

0.4

V

Output High Voltage

2.4

—

2.4

—

V

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

Typ.

(1)

Max.

Symbol

Parameter

Test Condition

Min.

2.0v

3.0V

2.0V

3.0V

Unit

—

2.0

—

—

—

—

V

Data Retention Current

MIL.

—

0.5

1.0

200

300

µA

COM’L.

—

0.5

1.0

20

30

Chip Deselect to Data

0—

—

—

—

ns

Retention Time

VIN

(3)

Operation Recovery Time

(2)

——

——

ns

(3)

Input Leakage Current

—

—

—

—

2

2

µA

NOTES:

2981 tbl 09

°C.

3. This parameter is guaranteed by device characterization, but is not production tested.

2981 tbl 08

2981 drw 03

DATA

RETENTION

MODE

4.5V

4.5V

≥ 2V

CS