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IDT6167LA55DB 数据表(PDF) 5 Page - Integrated Device Technology

部件名 IDT6167LA55DB
功能描述  CMOS STATIC RAM 16K (16K x 1-BIT)
PDF  8 Pages
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制造商  IDT [Integrated Device Technology]
网页  http://www.idt.com
标志 IDT - Integrated Device Technology

IDT6167LA55DB 数据表(HTML) 5 Page - Integrated Device Technology

  IDT6167LA55DB Datasheet HTML 1Page - Integrated Device Technology IDT6167LA55DB Datasheet HTML 2Page - Integrated Device Technology IDT6167LA55DB Datasheet HTML 3Page - Integrated Device Technology IDT6167LA55DB Datasheet HTML 4Page - Integrated Device Technology IDT6167LA55DB Datasheet HTML 5Page - Integrated Device Technology IDT6167LA55DB Datasheet HTML 6Page - Integrated Device Technology IDT6167LA55DB Datasheet HTML 7Page - Integrated Device Technology IDT6167LA55DB Datasheet HTML 8Page - Integrated Device Technology  
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5.2
5
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC TEST CONDITIONS
Input Pulse Levels
GND to 3.0V
Input Rise/Fall Times
5ns
Input Timing Reference Levels
1.5V
Output Reference Levels
1.5V
AC Test Load
See Figures 1 and 2
2981 tbl 10
Figure 2. AC Test Load
(for tCLZ, tCHZ, tWHZ and tOW)
*Includes scope and jig.
Figure 1. AC Test Load
2981 drw 04
480
30pF*
255
DATAOUT
5V
2981 drw 05
480
5pF*
255
DATAOUT
5V
AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V
± 10%, All Temperature Ranges)
6167SA15
6167SA20/25 6167SA35/45
(1) 6167SA55(1)/70(1)
6167LA15
6167LA20/25 6167LA35/45
(1) 6167LA55(1)/70(1)
Symbol
Parameter
Min.
Max.
Min. Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
15
20/25
35/45
55/70
ns
tAA
Address Access Time
15
20/25
35/45
55/70
ns
tACS
Chip Select Access Time
15
20/25
35/45
55/70
ns
tCLZ
(2)
Chip Deselect to Output in Low-Z
3
5/5
5/5
5/5
ns
tCHZ
(2)
Chip Select to Output in High-Z
10
10/10
15/30
40/40
ns
tOH
Output Hold from Address Change
3
5/5
5/5
5/5
ns
tPU
(2)
Chip Select to Power-Up Time
0
0/0
0/0
0/0
ns
tPD
(2)
Chip Deselect to Power-Down Time
15
20/25
35/45
55/70
ns
Write Cycle
tWC
Write Cycle Time
15
20/20
30/45
55/70
ns
tCW
Chip Select to End-of-Write
15
15/20
30/40
45/55
ns
tAW
Address Valid to End-of-Write
15
15/20
30/40
45/55
ns
tAS
Address Set-up Time
0
0/0
0/0
0/0
ns
tWP
Write Pulse Width
13
15/20
30/30
35/40
ns
tWR
Write Recovery Time
0
0/0
0/0
0/0
ns
tDW
Data Valid to End-of-Write
10
12/15
17/20
25/30
ns
tDH
Data Hold Time
0
0/0
0/0
0/0
ns
tWHZ
(2)
Write Enable to Output in High-Z
7
8/8
15/30
40/40
ns
tOW
(2)
Output Active from End-of-Write
0
0/0
0/0
0/0
ns
NOTES:
2981 tbl 11
1. –55
°C to +125°C temperature range only. Also available: 85ns and 100ns Military devices.
2. This parameter is guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.



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