IDT7134LA55CB datasheet(4/9 Pages) IDT

4 / 9 page

6.04

IDT7134SA/LA

HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM

MILITARY AND COMMERCIAL TEMPERATURE RANGES

DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES

(LA Version Only) VLC = 0.2V, VHC = VCC - 0.2V

Symbol

Parameter

Test Condition

Min.

Typ.

(1)

Max.

Unit

VDR

VCC for Data Retention

VCC = 2V

2.0

—

ICCDR

Data Retention Current

CE ≥ VHC

MIL.

—

100

4000

µA

VIN

≥ VHC or < VLC

COM’L.

—

100

1500

tCDR

(3)

Chip Deselect to Data Retention Time

—

(3)

Operation Recovery Time

tRC

(2)

——

NOTES:

2720 tbl 07

1. VCC = 2V, TA = +25

°C, and are not production tested.

2. tRC = Read Cycle Time.

3. This parameter is guaranteed by device characterization, but not production tested.

DATA RETENTION WAVEFORM

AC TEST CONDITIONS

Input Pulse Levels

GND to 3.0V

Input Rise/Fall Times

5ns

Input Timing Reference Levels

1.5V

Output Reference Levels

1.5V

Output Load

Figures 1 and 2

2720 tbl 08

Figure 1. AC Output Test Load

Figure 2. Output Test Load

(for tLZ, tHZ, tWZ, tOW)

+5V

1250

Ω

30pF *

775

Ω

DATAOUT

2720 drw 06

+5V

1250

Ω

5pF *

775

Ω

DATAOUT

2720 drw 07

*Including scope and jig

VCC

DATA RETENTION MODE

4.5V

VDR

≥ 2V

VDR

VIH

tCDR

2720 drw 05

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