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IDT7130LA55F 数据表(PDF) 7 Page - Integrated Device Technology

部件名 IDT7130LA55F
功能描述  HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM
PDF  14 Pages
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制造商  IDT [Integrated Device Technology]
网页  http://www.idt.com
标志 IDT - Integrated Device Technology

IDT7130LA55F 数据表(HTML) 7 Page - Integrated Device Technology

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6.01
7
IDT7130SA/LA AND IDT7140SA/LA
HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(3)
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(5)
7130X20(2)
7130X25(6)
7130X35
7130X55
7130X100
7140X25(6)
7140X35
7140X55
7140X100
Symbol
Parameter
Min.
Max.
Min. Max.
Min.
Max. Min.
Max.
Min.
Max.
Unit
Write Cycle
tWC
Write Cycle Time(3)
20
25
35
55
100
ns
tEW
Chip Enable to End-of-Write
15
20
30
40
90
ns
tAW
Address Valid to End-of-Write
15
20
30
40
90
ns
tAS
Address Set-up Time
0
0
0
0
0
ns
tWP
Write Pulse Width(4)
15
15
25
30
55
ns
tWR
Write Recovery Time
0
0
0
0
0
ns
tDW
Data Valid to End-of-Write
10
12
15
20
40
ns
tHZ
Output High-Z Time
(1)
—10
10
—15
25
40
ns
tDH
Data Hold Time
0
0
0
0
0
ns
tWZ
Write Enabled to Output in High-Z
(1)
—10
10
—15
25
40
ns
tOW
Output Active From End-of-Write(1)
0—
0—
0—
0—
0
ns
NOTES:
2689 tbl 10
1. Transition is measured
±500mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by
device characterization but is not production tested.
2. 0
°C to +70°C temperature range only, PLCC and TQFP packages.
3. For MASTER/SLAVE combination, tWC = tBAA + tWP, since R/
W = VIL must occur after tBAA.
4. If
OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off
data to be placed on the bus for the required tDW. If
OE is High during a R/W controlled write cycle, this requirement does not apply and the
write pulse can be as short as the specified tWP.
5. “X” in part numbers indicates power rating (SA or LA).
6. Not available in DIP packages.
tACE
tAOE
tHZ
tLZ
tPD
VALID DATA
tPU
50%
DATAOUT
CURRENT
ICC
ISS
50%
2689 drw 09
(4)
(1)
(1)
(2)
(2)
(4)
tLZ
tHZ
NOTES:
1. Timing depends on which signal is asserted last,
OE or CE.
2. Timing depends on which signal is deaserted first,
OE or CE.
3. R/
W = VIH and the address is valid prior to or coincidental with CE transition Low.
4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD.



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