2SC2883 datasheet(1/2 Pages) MAKOSEMI

部件名	2SC2883

功能描述	Low voltage

PDF	2 Pages

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制造商	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

网页	http://www.makosemi.hk/

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1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

• Low voltage

Maximum Ratings (Ta=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

30

V

Emitter-Base Voltage

VEBO

5

V

Collector Current -Continuous

IC

1.5

A

Collector Power dissipation

PC

0.5

W

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

ELECTRICAL CHARACTERISTICS ( @ Ta=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

VCBO

IC=1mA,IE=0

30

V

Collector-emitter breakdown voltage

VCEO

IC=10mA,IB=0

30

V

Emitter-base breakdown voltage

VEBO

IE=1mA,IC=0

5

V

Collector cut-off current

ICBO

VCB=30V,IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

μA

DC current gain

hFE

VCE=2V,IC=0.5A

100

320

Collector-emitter saturation voltage

VCE(sat)

IC=1.5A,IB=30mA

2

V

Base-emitter voltage

VBE

VCE=2V,IC=0.5A

1

V

Transition frequency

fT

VCE=2V,IC=500mA

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

40

pF

CLASSIFICATION OF hFE

Rank

O

Y

Range

100-200

160-320

Marking

GO

GY

2SC2883 (NPN)

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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