PXT8050 datasheet(1/2 Pages) MAKOSEMI

部件名	PXT8050

功能描述	Complimentary to PXT8550

PDF	2 Pages

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制造商	MAKOSEMI [MAKO SEMICONDUCTOR CO.,LIMITED]

网页	http://www.makosemi.hk/

标志

1 / 2 page

Page:P2-P1

Plastic-Encapsulate Transistors

FEATURES

Complimentary to PXT8550

Collector current: IC=1.5A

MARKING: Y1

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

40

V

Collector-Emitter Voltage

V

CEO

25

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

1500

Collector Power Dissipation

P

C

1000

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V

CBO

I

C= 100μA,

I

E=0

40

V

Collector-emitter breakdown voltage

V

CEO

I

C= 0.1mA,

I

B=0

25

V

Emitter-base breakdown voltage

V

EBO

I

E= 100μA,

I

C=0

5

V

Collector cut-off current

ICBO

V

CB= 40 V ,

I

E=0

0.1

μA

Collector cut-off current

ICEO

V

CE= 20 V ,

I

B=0

0.1

μA

Emitter cut-off current

IEBO

V

EB= 5V,

I

C=0

0.1

μA

DC current gain

h

FE(1)

V

CE= 1V,

I

C= 100mA

85

400

h

FE(2)

V

CE= 1V,

I

C= 800mA

50

Collector-emitter saturation voltage

V

CE(sat)

I

C=800mA, IB=80mA

0.5

V

Base-emitter saturation voltage

V

BE(sat)

I

C=800mA, IB=80mA

1.2

V

Base-emitter voltage

V

BE

V

CE=1V, IC=10mA

1

V

Base-emitter positive favor voltage

V

BEF

IB=1A

1.5

5

V

Transition frequency

fT

VCE=10V,IC=50mA,f=30MHz

100

MHz

output capacitance

Cob

V

CB=10V,IE=0,f=1MHz

15

pF

CLASSIFICATION

OF

HFE

Rank

B

C

D

D1

Range

85-160

120-200

160-300

300-400

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

(NPN)

mA

mW

PXT8050

MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/

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