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IDT74FCT640CSOB 数据表(PDF) 2 Page - Integrated Device Technology

部件名 IDT74FCT640CSOB
功能描述  FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
PDF  7 Pages
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制造商  IDT [Integrated Device Technology]
网页  http://www.idt.com
标志 IDT - Integrated Device Technology

IDT74FCT640CSOB 数据表(HTML) 2 Page - Integrated Device Technology

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IDT54/74FCT245/A/C, IDT54/74FCT640/A/C, IDT54/74FCT645/A/C
FAST CMOS OCTAL BIDIRECTIONAL TRANSCEIVERS
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN DESCRIPTION
Pin Names
Description
OE
Output Enable Input (Active LOW)
T/
R
Transmit/Receive Input
A0–A7
Side A Inputs or 3-State Outputs
B0–B7
Side B Inputs or 3-State Outputs
2534 tbl 05
FUNCTION TABLE
(2)
Inputs
OE
OE
T/
RR
Outputs
L
L
Bus B Data to Bus A
(1)
L
H
Bus A Data to Bus B
(1)
H
X
High Z State
NOTES:
2534 tbl 06
1. 640 is inverting from input to output.
2. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
Unit
VTERM
(2) Terminal Voltage
–0.5 to +7.0
–0.5 to +7.0
V
with Respect
to GND
VTERM
(3) Terminal Voltage
–0.5 to VCC
–0.5 to VCC
V
with Respect
to GND
TA
Operating
0 to +70
–55 to +125
°C
Temperature
TBIAS
Temperature
–55 to +125
–65 to +135
°C
Under Bias
TSTG
Storage
–55 to +125
–65 to +150
°C
Temperature
PT
Power Dissipation
0.5
0.5
W
IOUT
DC Output Current
120
120
mA
NOTES:
2534 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied.
Exposure to absolute maximum rating
conditions for extended periods may affect reliability. No terminal voltage
may exceed VCC by +0.5V unless otherwise noted.
2. Inputs and VCC terminals.
3. Outputs and I/O terminals.
CAPACITANCE (TA = +25
°C, f = 1.0MHz)
Symbol
Parameter
(1)
Conditions
Typ. Max. Unit
CIN
Input Capacitance
VIN = 0V
6
10
pF
CI/O
I/O Capacitance
VOUT = 0V
8
12
pF
NOTE:
2534 tbl 02
1. This parameter is measured at characterization but not tested.



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