E

28F016SA

49

5.11

Erase and Word/Byte Write Performance, Cycling Performance and

°C to +70°C

Sym

Parameter

Notes

Min

Max

Units

Test Conditions

Page Buffer Byte Write Time

2,4

3.26

Note 6

µs

Page Buffer Word Write Time

2,4

6.53

Note 6

µs

Word/Byte Program Time

2

9

Note 6

µs

Block Program Time

2

0.6

2.1

sec

Byte Prog. Mode

Block Program Time

2

0.3

1.0

sec

Word Prog. Mode

Block Erase Time

2

0.8

10

sec

Full Chip Erase Time

2

25.6

sec

Erase Suspend Latency Time

to Read

7.0

µs

Auto Erase Suspend Latency

Time to Write

10.0

µs

Erase Cycles

5

100,000 1,000,000

Cycles

°C to +70°C

Sym

Parameter

Notes

Min

Max

Units

Test Conditions

Page Buffer Byte Write Time

2,4

2.76

Note 6

µs

Page Buffer Word Write Time

2,4

5.51

Note 6

µs

Word/Byte Program Time

2

6

Note 6

µs

Block Program Time

2

0.4

2.1

sec

Byte Prog. Mode

Block Program Time

2

0.2

1.0

sec

Word Prog. Mode

Block Erase Time

2

0.6

10

sec

Full Chip Erase Time

2

19.2

sec

Erase Suspend Latency Time

to Read

5.0

µs

Auto Erase Suspend Latency

Time to Write

8.0

µs

Erase Cycles

5

100,000 1,000,000

Cycles

NOTES:

1.

+25

2.

Excludes system-level overhead.

3.

These performance numbers are valid for all speed versions.

4.

This assumes using the full Page Buffer to data program to the flash memory (256 bytes or 128 words).

5.

Typical 1,000,000 cycle performance assumes the application uses block retirement techniques.

6.

This information will be available in a technical paper. Please call Intel’s Application Hotline or your local Intel Sales office

for more information.