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IDT7132LA55FI 数据表(PDF) 5 Page - Integrated Device Technology

部件名 IDT7132LA55FI
功能描述  HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS
PDF  16 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  IDT [Integrated Device Technology]
网页  http://www.idt.com
标志 IDT - Integrated Device Technology

IDT7132LA55FI 数据表(HTML) 5 Page - Integrated Device Technology

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6.42
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM
Military, Industrial and Commercial Temperature Ranges
5
Data Retention Characteristics (LA Version Only)
NOTES:
1. VCC = 2V, TA = +25°C, and is not production tested.
2. tRC = Read Cycle Time
3. This parameter is guaranteed but not production tested.
NOTE:
1. At Vcc
< 2.0V leakages are undefined.
DC Electrical Characteristics Over the Operating
Temperature Supply Voltage Range (VCC = 5.0V ± 10%)
Data Retention Waveform
VCC
CE
4.5V
4.5V
DATA RETENTION MODE
tCDR
tR
VIH
VIH
VDR
VDR 2.0V
2692 drw 05
≥
,
Symbol
Parameter
Test Conditions
7132SA
7142SA
7132LA
7142LA
Unit
Min.
Max.
Min.
Max.
|ILI|
Input Leakage Current(1)
VCC = 5.5V,
VIN = 0V to VCC
___
10
___
5µA
|ILO|
Output Leakage Current
VCC = 5.5V,
CE
= VIH, VOUT = 0V to VCC
___
10
___
5
µA
VOL
Output Low Voltage
IOL = 4mA
___
0.4
___
0.4
V
VOL
Open Drain Output
Low Voltage (BUSY)
IOL = 16mA
___
0.5
___
0.5
V
VOH
Output High Voltage
IOH = -4mA
2.4
___
2.4
___
V
2692 tbl 05
Symbol
Parameter
Test Condition
Min.
Typ.(1)
Max.
Unit
VDR
VCC for Data Retention
VCC = 2.0V
2.0
___
___
V
ICCDR
Data Retention Current
CE
> VCC -0.2V
VIN > VCC -0.2V or
Mil. & Ind.
___
100
4000
µA
Com'l.
___
100
1500
µA
tCDR(3)
Chip Deselect to Data Retention Time
VIN < 0.2V
0
___
___
ns
tR(3)
Operation Recovery Time
tRC(2)
___
___
ns
2692 tbl 06



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