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HSMBJSAC50 数据表(PDF) 3 Page - List of Unclassifed Manufacturers |
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HSMBJSAC50 数据表(HTML) 3 Page - List of Unclassifed Manufacturers |
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3 / 3 page ![]() HSMBJSAC5.0 thru HSMBJSAC75 Document Number: HSMBJSAC5.0 thru HSMBJSAC75 www.smsemi.com Feb.29, 2012 3 Schematic Applications The TVS low capacitance device configuration is shown in Fig.4. As a further option for unidirectional applications, an additional low capacitance rectifier diode may be used in parallel in the sane polarity direction as the TVS as shown in Fig.5. In applications where random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage rating than the TVS clamping voltage VC. If using two (2) low capacitance TVS devices in also provided. The unidirectional and bidirectional configurations in Fig.5 and 6 will both in twice the capacitance of Fig.4 Fig.3 Derating Curve 100 80 60 40 20 0 Peak Pulse Power (Single Pulse). Average Power 0 50 100 150 200 Lead or Ambient Temperature (℃) TVS DIODE + IN OUT + Fig.4 TVS with internal Low Capacitance Diode Fig.5 Optional Unidirectional configuration (TVS and separate rectifier diode in parallel) Fig.6 Optional Bidirectional configuration (two TVS and devices in anti-parallel) 打印无效 |
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