CA3045 datasheet(2/6 Pages) INTERSIL

2 / 6 page

Absolute Maximum Ratings

Thermal Information

Collector-to-Emitter Voltage (VCEO) . . . . . . . . . . . . . . . . . . . . . 15V

Collector-to-Base Voltage (VCBO) . . . . . . . . . . . . . . . . . . . . . . . 20V

Collector-to-Substrate Voltage (VCIO, Note 1) . . . . . . . . . . . . . . 20V

Emitter-to-Base Voltage (VEBO) . . . . . . . . . . . . . . . . . . . . . . . . . 5V

Collector Current (IC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Operating Conditions

Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC

Thermal Resistance (Typical, Note 2)

θJA (oC/W) θJC (oC/W)

PDIP Package . . . . . . . . . . . . . . . . . . .

180

N/A

CERDIP Package . . . . . . . . . . . . . . . . .

150

SOIC Package . . . . . . . . . . . . . . . . . . .

220

N/A

Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW

Maximum Junction Temperature (Hermetic Packages). . . . . . . .175oC

Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC

Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC

Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC

(SOIC - Lead Tips Only)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTES:

1. The collector of each transistor of the CA3045 and CA3046 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must

be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac-

tion.

θJA is measured with the component mounted on an evaluation PC board in free air.

Electrical Speciﬁcations

TA = 25

oC, characteristics apply for each transistor in CA3045 and CA3046 as specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

DC CHARACTERISTICS

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC = 10µA, IE = 0

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC = 1mA, IB = 0

Collector-to-Substrate Breakdown Voltage

V(BR)CIO

IC = 10µA, ICI = 0

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE = 10µA, IC = 0

Collector Cutoff Current (Figure 1)

ICBO

VCB = 10V, IE = 0

0.002

Collector Cutoff Current (Figure 2)

ICEO

VCE = 10V, IB = 0

See Fig. 2

0.5

µA

Forward Current Transfer Ratio (Static Beta)

(Note 3) (Figure 3)

hFE

VCE = 3V

IC = 10mA

100

IC = 1mA

100

IC = 10µA-

Input Offset Current for Matched Pair Q1 and Q2.

|IIO1 - IIO2| (Note 3) (Figure 4)

VCE = 3V, IC = 1mA

0.3

µA

Base-to-Emitter Voltage (Note 3) (Figure 5)

VBE

VCE = 3V

IE = 1mA

0.715

IE = 10mA

0.800

Magnitude of Input Offet Voltage for Differential Pair

|VBE1 - VBE2| (Note 3) (Figures 5, 7)

VCE = 3V, IC = 1mA

0.45

Magnitude of Input Offset Voltage for Isolated

Transistors |VBE3 - VBE4|, |VBE4 - VBE5|,

|VBE5 - VBE3| (Note 3) (Figures 5, 7)

VCE = 3V, IC = 1mA

0.45

Temperature Coefficient of Base-to-Emitter

Voltage (Figure 6)

VCE = 3V, IC = 1mA

-1.9

mV/oC

Collector-to-Emitter Saturation Voltage

VCES

IB = 1mA, IC = 10mA

0.23

Temperature Coefficient: Magnitude of Input Off-

set Voltage (Figure 7)

VCE = 3V, IC = 1mA

1.1

µV/oC

DYNAMIC CHARACTERISTICS

Low Frequency Noise Figure (Figure 9)

f = 1kHz, VCE = 3V, IC = 100µA,

Source Resistance = 1k

Ω

3.25

Low Frequency, Small Signal Equivalent

Circuit Characteristics

Forward Current Transfer Ratio (Figure 11)

hFE

f = 1kHz, VCE = 3V, IC = 1mA

110

Short Circuit Input Impedance (Figure 11)

hIE

f = 1kHz, VCE = 3V, IC = 1mA

3.5

Ω

∆V

∆T

---------------

∆V

∆T

----------------

CA3045, CA3046

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