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2SB767-R-HF 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

部件名 2SB767-R-HF
功能描述  PNP Transistors
PDF  2 Pages
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制造商  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
网页  http://www.kexin.com.cn/index.asp
标志 KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SB767-R-HF 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SB767-R-HF Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd 2SB767-R-HF Datasheet HTML 2Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
www.kexin.com.cn
1
Transistors
Features
Large collector power dissipation PC
High collector to emitter voltage VCEO.
Complimentary to 2SD875-HF
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
VCBO
-80
Collector - Emitter Voltage
VCEO
-80
Emitter - Base Voltage
VEBO
-5
Collector Current - Continuous
IC
-0.5
Collector Current - Pulse
ICP
-1
Collector Power Dissipation
PC
1
W
Junction Temperature
TJ
150
Storage Temperature range
Tstg
-55 to 150
V
A
Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector- base breakdown voltage
VCBO
Ic= -100 μA, IE=0
-80
Collector- emitter breakdown voltage
VCEO
Ic= -1 mA, IB=0
-80
Emitter - base breakdown voltage
VEBO
IE= -100μA, IC=0
-5
Collector-base cut-off current
ICBO
VCB= -60 V , IE=0
-100
Emitter cut-off current
IEBO
VEB= -4V , IC=0
-100
Collector-emitter saturation voltage
VCE(sat) IC=-300 mA, IB=-30mA
-0.2
-0.4
Base - emitter saturation voltage
VBE(sat) IC=-300 mA, IB=-30mA
-0.85 -1.2
hFE(1)
VCE= -10V, IC= -150mA
90
330
hFE(2)
VCE=- 5V, IC= -500mA
50
100
Collector output capacitance
Cob
VCB= -10V, IE= 0,f=1MHz
20
30
pF
Transition frequency
fT
VCE= -10V, IE= 50mA,f=200MHz
120
MHz
DC current gain
V
nA
V
Classification of hfe(1)
Type
2SB767-Q-HF
2SB767-R-HF
2SB767-S-HF
Range
90-155
130-220
185-330
Marking
CQ F
CR F
CS F
Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
PNP Transistors
2SB767-HF


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