2SB956-R datasheet(1/2 Pages) KEXIN

部件名	2SB956-R

功能描述	PNP Transistors

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

PNP Transistors

2SB956

■

Features

●

Large collector power dissipation PC.

●

Low collector to emitter saturation voltage VCE(sat).

●

Complementary to 2SD1280

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-20

Collector - Emitter Voltage

VCEO

-20

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-1

Collector current -Pulse

ICP

-2

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-20

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-20

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -20V , IE=0

-1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-1 A, IB=-50mA

-0.5

Base - emitter saturation voltage

VBE(sat) IC=-500 mA, IB=-50mA

-1.2

hFE(1)

VCE= -2V, IC= -500mA

130

280

hFE(2)

VCE= -2V, IC= -1.5 A

50

Collector output capacitance

Cob

VCB = –6V, IE = 0, f = 1MHz

40

pF

Transition frequency

fT

VCE= -6V, IE= 50mA,f=200MHz

200

MHz

DC current gain

V

uA

V

■

Classification of hfe(1)

Type

2SB956-R

2SB956-S

Range

130-210

180-280

Marking

HR

HS

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