2SB962-Z-R datasheet(1/3 Pages) KEXIN

部件名	2SB962-Z-R

功能描述	PNP Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

PNP Transistors

2SB962-Z

■

Features

●

Low collector to emitter saturation voltage VCE(sat).

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-40

Collector - Emitter Voltage

VCEO

-30

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-3

Collector current -Pulse

ICP

-6

Collector Power Dissipation

(Note.1)

PC

2

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-40

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-30

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -30V , IE=0

-10

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-2 A, IB=-200mA (Note.1)

-0.3

-0.5

Base - emitter saturation voltage

VBE(sat) IC=-2 A, IB=-200mA (Note.1)

-1

-2

hFE(1)

VCE= -2V, IC= -20mA (Note.1)

30

150

hFE(2)

VCE= -2V, IC= -1 A

(Note.1)

60

160

400

Collector output capacitance

Cob

VCB = –10V, IE = 0, f = 1MHz

55

pF

Transition frequency

fT

VCE= -5V, IE= 100mA

80

MHz

DC current gain

V

uA

V

Note.1: Pulsed: PW ≤ 350us,Duty Cycle≤ 2℅

■

Classification of hfe(2)

Type

2SB962-Z-R

2SB962-Z-Q

2SB962-Z-P

2SB962-Z-E

Range

60-120

100-200

160-320

200-400

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