2SB967-R datasheet(1/2 Pages) KEXIN

部件名	2SB967-R

功能描述	PNP Transistors

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB967

■

Features

●

Large collector current Ic

●

Low collector to emitter saturation voltage VCE(sat).

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-27

Collector - Emitter Voltage

VCEO

-18

Emitter - Base Voltage

VEBO

-7

Collector Current - Continuous

IC

-5

Collector current -Pulse

ICP

-8

Collector Power Dissipation

PC

20

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-27

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA， IB=0

-18

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-7

Collector-base cut-off current

ICBO

VCB= -20V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-1

Collector-emitter saturation voltage

VCE(sat) IC=-3 A, IB=-100mA

-1

Base - emitter saturation voltage

VBE(sat) IC=-3 A, IB=-100mA

-1.2

DC current gain

hFE

VCE= -2V, IC= -2 A

90

625

Collector output capacitance

Cob

VCB = –20V, IE = 0, f = 1MHz

85

pF

Transition frequency

fT

VCE= -6V, IE= 50mA,f=200MHz

120

MHz

V

uA

V

■

Classification of hfe

Type

2SB967-P

2SB967-Q

2SB967-R

Range

90-135

125-205

180-625

类似零件编号 - 2SB967-R

制造商	部件名	数据表	功能描述
Panasonic Semiconductor	2SB967	43Kb / 2P	Silicon PNP epitaxial planar type(For low-frequency power amplification)
Guangdong Kexin Industr...	2SB967	39Kb / 1P	Silicon PNP Epitaxial Planar Type

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类似说明 - 2SB967-R

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