2SA1890-R datasheet(1/2 Pages) KEXIN

部件名	2SA1890-R

功能描述	PNP Transistors

PDF	2 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

PNP Transistors

2SA1890

■

Features

●

Low collector to emitter saturation voltage VCE(sat).

●

High collector to emitter voltage VCEO.

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-80

Collector - Emitter Voltage

VCEO

-80

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-1

Colletor Current - Pulse

ICP

-1.5

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-80

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA，IB= 0

-80

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-5

Collector-base cut-off current

ICBO

VCB= -40 V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -4V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-500mA, IB=-50mA

-0.2

-0.3

Base - emitter saturation voltage

VBE(sat) IC=-500mA, IB=-50mA

-0.85 -1.2

VCE= -2V, IC= -100mA

120

340

VCE= -2V, IC= -500mA

60

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

15

30

pF

Transition frequency

fT

VCE= -10V, IE= 50mA,f=200MHz

120

MHz

V

uA

DC current gain

hFE

■

Classification of hfe(1)

Type

2SA1890-Q

2SA1890-R

Range

120-240

170-340

Marking

1ZQ

1ZR

●

Complementary to 2SC5026.

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