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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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2SB710A-R 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SB710A-R 数据表(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page  SMD Type www.kexin.com.cn 2 Transistors PNP Transistors 2SB710A ■ Typical Characterisitics VCE(sat) - IC VBE(sat) IC hFE IC PC - Ta IC VCE IC IB fT IE Cob VCB VCER RBE 0 6 1 0 40 120 80 0 240 200 160 120 80 40 Ambient temperature Ta (°C) 0 2 1 – 0 0 1 – 2 – –4 –8 –6 −1200 −1000 −800 −600 −400 −200 −9 mA −8 mA −7 mA −6 mA −5 mA −4 mA −3 mA −2 mA −1 mA IB = −10 mA Collector-emitter voltage VCE (V) T a = 25° C 0 −10 −8 −6 −4 −2 0 −800 −700 −600 −500 −400 −300 −200 −100 Base current IB (mA) V CE = −10 V T a = 25° C − 0.001 −1 − 0.01 − 0.1 −1 −10 −10 −100 −1000 Collector current IC (mA) I C/IB = 10 25° C −25°C T a=75° C −1 − 0.1 −1 −10 −100 −10 −100 −1000 T a = −25°C 25° C 75° C Collector current I C(mA) IC /IB = 10 − 0.01 0 600 500 400 300 200 100 −1 −10 V CE = −10 V − 0.01 − 0.1 Collector current IC (A) T a = 75° C 25° C −25°C 0 240 200 160 120 80 40 1 10 100 Emitter current IE (mA) V CB = −10 V T a = 25° C 0 −1 24 20 16 12 8 4 −10 −100 Collector-base voltage VCB (V) IE = 0 f= 1 MHz T a = 25° C 1 10 100 1000 0 −120 −100 −80 −60 −40 −20 Base-emitter resistance RBE (kΩ) IC = −2 mA T a = 25° C 2SB0710A |
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