2SB1073-R datasheet(1/2 Pages) KEXIN

部件名	2SB1073-R

功能描述	PNP Transistors

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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Transistors

PNP Transistors

2SB1073

■

Features

●

Low collector to emitter saturation voltage VCE(sat).

●

Large peak collector current ICP.

1.Base

2.Collector

3.Emitter

1.70 0.1

0.42 0.1

0.46 0.1

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-30

Collector - Emitter Voltage

VCEO

-20

Emitter - Base Voltage

VEBO

-7

Collector Current - Continuous

IC

-4

Collector current -Pulse

ICP

-7

Collector Power Dissipation

PC

1

W

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

V

℃

A

■

Electrical Characteristics Ta = 25℃

■

Classification of hfe

Type

2SB1073-Q

2SB1073-R

Range

120-205

180-315

Marking

IQ

IR

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -100 μA， IE=0

-30

Collector- emitter breakdown voltage

VCEO

Ic= -1 mA，IB=0

-20

Emitter - base breakdown voltage

VEBO

IE= -100μA， IC=0

-7

Collector-base cut-off current

ICBO

VCB= -30V , IE=0

-0.1

Emitter cut-off current

IEBO

VEB= -7V , IC=0

-0.1

Collector-emitter saturation voltage

VCE(sat) IC=-3 A, IB=-100mA

-0.6

-1

Base - emitter saturation voltage

VBE(sat) IC=-3 A, IB=-100mA

-1.2

DC current gain

hFE

VCE= -2V, IC= -2 A

120

315

Collector output capacitance

Cob

VCB = –20V, IE = 0, f = 1MHz

40

pF

Transition frequency

fT

VCE= -6V, IE= 50mA,f=200MHz

120

MHz

V

uA

V

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