2SB1181-R datasheet(2/2 Pages) KEXIN

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Transistors

PNP Transistors

2SB1181

■

Typical Characterisitics

Fig.1 Grounded emitter propagation

characteristics

−0.1

−100

−1000

BASE TO EMITTER VOLTAGE : VBE

(V)

−0.8

−1.2

−1.6

−10

−0.2 −0.4

−1.0

−1.4

−0.6

Ta =25 °

V CE

= −5V

Fig.2 Grounded emitter output

characteristics

−0.2

−0.8

−1.0

−0.4

−0.8

−1.2

−1.6

−0.4

−0.6

−2.0

−0.2

−0.6

−1.0

−1.4

−1.8

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Ta =25 °

−0.5mA

IB =0mA

−1mA

−1.5mA

−2mA

−2.5mA

−3mA

−3.5mA

−4mA

−4.5mA

Fig.3 DC current gain vs.

collector current

−1 −2

−5 −10 −20 −50 −100 −200 −500

−2000

COLLECTOR CURRENT : IC (mA)

−1000

100

200

500

1000

V CE

= − 3V

−1V

Ta =25 °

Fig.4 Collector-emitter saturation

voltage vs. collector current

−0.01

−0.02

−0.05

−0.1

−0.2

−0.5

−1

−2

Ta =25 °

IC /IB =20

−1 −2

−5 −10 −20 −50 −100 −200 −500

−2000

−1000

COLLECTOR CURRENT : IC

(mA)

Fig.5 Gain bandwidth product

vs. emitter current

5 10 20

50 100 200 500 1000

100

200

500

1000

EMITTER CURRENT : IE

(mA)

Ta =25 °

V CE

= −5V

Fig.6 Collector output capacitance

vs. collector-base voltage

-0.2

−0.1

−0.5 -1 −2

−5 −10 −20 −50 −100

100

200

500

1000

Ta=25

°C

f=1MHz

IE=

COLLECTOR TO BASE VOLTAGE : VCB

(V)

2SB1181-R 数据表(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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