2SB1266-R datasheet(1/3 Pages) KEXIN

部件名	2SB1266-R

功能描述	PNP Transistors

PDF	3 Pages

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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1

Transistors

PNP Transistors

2SB1266

■

Features

●

Suitable for sets whose height is restricted

●

Complementary to 2SD1902

2.3

0.60+ 0.1

- 0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4 .60 +0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.127

max

TO-252

Unit: mm

1 Base

2 Collector

3 Emitter

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Collector - Base Voltage

VCBO

-60

Collector - Emitter Voltage

VCEO

-60

Emitter - Base Voltage

VEBO

-6

Collector Current - Continuous

IC

-3

Collector Current - Pulse

ICP

-8

Collector Power Dissipation

Tc = 25°C

30

Ta = 25°C

1.65

Junction Temperature

TJ

150

Storage Temperature range

Tstg

-55 to 150

PC

W

V

℃

A

■

Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

VCBO

Ic= -1 mA， IE=0

-60

Collector- emitter breakdown voltage

VCEO

Ic= -5 mA, RBE=∞

-60

Emitter - base breakdown voltage

VEBO

IE= -1 mA， IC=0

-6

Collector-base cut-off current

ICBO

VCB= -50V , IE=0

-100

Emitter cut-off current

IEBO

VEB= -5V , IC=0

-100

Collector-emitter saturation voltage

VCE(sat) IC=-2 A, IB=-200 mA

-0.4

-1

Base - emitter saturation voltage

VBE(sat) IC=-2 A, IB=-200 mA

-1.2

Base - emitter voltage

VBE

VCE= -5V, IC= -500 mA

-1

VCE= -5V, IC= -500 mA

70

280

VCE= -5V, IC= -3 A

20

Collector output capacitance

Cob

VCB= -10V, IE= 0,f=1MHz

60

pF

Transition frequency

fT

VCE= -5V, IC= -500 mA

8

MHz

DC current gain

hFE

V

uA

■

Classification of hfe(1)

Type

2SB1266-Q

2SB1266-R

2SB1266-S

Range

70-140

100-200

140-280

类似零件编号 - 2SB1266-R

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